4N80G-TM3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N80G-TM3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: TO251
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4N80G-TM3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
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UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
Otros transistores... 4N80G-TF1-T , 4N80L-TF2-T , 4N80G-TF2-T , 4N80L-T2Q-T , 4N80G-T2Q-T , 4N80L-TF3-T , 4N80G-TF3-T , 4N80L-TM3-T , SKD502T , 4N80L-TN3-R , 4N80G-TN3-R , 4N80L-TND-R , 4N80G-TND-R , 4N80L-TMA-T , 4N80G-TMA-T , 4N80L-TMA8-T , 4N80G-TMA8-T .
History: MCQ4822 | CHM6561QGP
History: MCQ4822 | CHM6561QGP
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