4N80G-TMA8-T Todos los transistores

 

4N80G-TMA8-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4N80G-TMA8-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO251L
 

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4N80G-TMA8-T datasheet

 ..1. Size:254K  utc
 4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf pdf_icon

4N80G-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

 6.1. Size:254K  utc
 4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf pdf_icon

4N80G-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

 6.2. Size:445K  utc
 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf pdf_icon

4N80G-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 1 1 TO-220F1 TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON) charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2 * R 3.7 @ V =10V, I =2.0A DS(ON) GS D * Low

 6.3. Size:232K  utc
 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r.pdf pdf_icon

4N80G-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 1 DMOS technology. This technology is specialized in allowing a TO-220F1 TO-262 minimum on-state resistance, and superior switching per

MOSTRAR MÁS

Otros transistores... 4N80G-TM3-T , 4N80L-TN3-R , 4N80G-TN3-R , 4N80L-TND-R , 4N80G-TND-R , 4N80L-TMA-T , 4N80G-TMA-T , 4N80L-TMA8-T , IRFZ24N , 4N90L-TA3-T , 4N90G-TA3-T , 4N90L-TF3-T , 4N90G-TF3-T , 4N90L-TF1-T , 4N90G-TF1-T , 4N90L-TF2-T , 4N90G-TF2-T .

 

 
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