4N90L-TM3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N90L-TM3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 188 nS
Cossⓘ - Capacitancia de salida: 49 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
Paquete / Cubierta: TO251
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4N90L-TM3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
Otros transistores... 4N90L-TF3-T , 4N90G-TF3-T , 4N90L-TF1-T , 4N90G-TF1-T , 4N90L-TF2-T , 4N90G-TF2-T , 4N90L-TF3T-T , 4N90G-TF3T-T , STP65NF06 , 4N90G-TM3-T , 4N90L-TN3-R , 4N90G-TN3-R , 4N90L-T3N-T , 4N90G-T3N-T , 50N06L-TA3-T , 50N06G-TA3-T , 50N06L-TF3-T .
History: IRF7453 | IPP530N15N3 | STP75N3LLH6 | JMSH0804NC | SSF6N70GM | SRT10N160LM
History: IRF7453 | IPP530N15N3 | STP75N3LLH6 | JMSH0804NC | SSF6N70GM | SRT10N160LM
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