4N90G-T3N-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N90G-T3N-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 188 nS
Cossⓘ - Capacitancia de salida: 49 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
Paquete / Cubierta: TO3PN
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4N90G-T3N-T Datasheet (PDF)
4n90l-tf3t-t 4n90g-tf3t-t 4n90l-tm3-t 4n90g-tm3-t 4n90l-tn3-r 4n90g-tn3-r 4n90l-t3n-t 4n90g-t3n-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFETadopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance andperfect switching performance. It also ca
Otros transistores... 4N90G-TF2-T , 4N90L-TF3T-T , 4N90G-TF3T-T , 4N90L-TM3-T , 4N90G-TM3-T , 4N90L-TN3-R , 4N90G-TN3-R , 4N90L-T3N-T , EMB04N03H , 50N06L-TA3-T , 50N06G-TA3-T , 50N06L-TF3-T , 50N06G-TF3-T , 50N06L-TF3T-T , 50N06G-TF3T-T , 50N60L-TM3-T , 50N60G-TM3-T .
History: AUIRF7309Q | DH012N03D | SSF1331P | 2SK1035 | SDM9435A | IRFR110A
History: AUIRF7309Q | DH012N03D | SSF1331P | 2SK1035 | SDM9435A | IRFR110A
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