50N60G-TM3-T Todos los transistores

 ..1. Size:333K  utc
 50n06l-ta3-t 50n06g-ta3-t 50n06l-tf3-t 50n06g-tf3-t 50n06l-tf3t-t 50n06g-tf3t-t 50n60l-tm3-t 50n60g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-263 TO-251 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 1 It is mainly suitable electronic

 9.1. Size:446K  fairchild semi
 fdbl0150n60.pdf

June 2015 FDBL0150N60 N-Channel PowerTrench MOSFET 60 V, 240 A, 1.5 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automation Battery Operated tools S Battery Protection For current package d

 9.2. Size:621K  fairchild semi
 sgl50n60rufd.pdf

IGBT SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 50A series is designed f

 9.3. Size:2023K  infineon
 ikfw50n60et.pdf

IKFW50N60ET TRENCHSTOPTM Advanced Isolation TRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Very low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast recovery anti-parallel diode

 9.4. Size:350K  infineon
 sgw50n60hs.pdf

SGW50N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

 9.5. Size:1551K  infineon
 ikw50n60dtp.pdf

IGBT TRENCHSTOP Performance technology copacked with RAPID 1 fast anti-parallel diode IKW50N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW50N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losse

 9.6. Size:642K  infineon
 igb50n60t.pdf

IGB50N60T TRENCHSTOP Series p Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G G Designed for frequency inverters for washing machines, fans, E E pumps and vacuum cleaners TRENCHSTOP technology for 600V application

 9.7. Size:2005K  infineon
 ikfw50n60dh3.pdf

IKFW50N60DH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel

 9.8. Size:1457K  infineon
 igw50n60tp.pdf

IGBT TRENCHSTOPTM Performance technology IGW50N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW50N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat

 9.9. Size:2179K  infineon
 ikw50n60h3.pdf

 9.10. Size:443K  infineon
 igp50n60t.pdf

IGP50N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers

 9.11. Size:2000K  infineon
 ikfw50n60dh3e.pdf

IKFW50N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel

 9.12. Size:1971K  infineon
 aikw50n60ct.pdf

AIKW50N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor

 9.13. Size:448K  infineon
 igp50n60t igw50n60t rev2 6g.pdf

IGP50N60T TrenchStop Series IGW50N60T Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers P

 9.14. Size:1988K  infineon
 igw50n60h3.pdf

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 9.15. Size:1642K  infineon
 ikw50n60h3 rev1 1g.pdf

 9.16. Size:412K  infineon
 ikw50n60trev2 4g.pdf

IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Field

 9.17. Size:350K  infineon
 sgw50n60hsg.pdf

SGW50N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

 9.18. Size:462K  infineon
 igb50n60t rev2 5g.pdf

IGB50N60T TrenchStop Series p Low Loss IGBT in TrenchStop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight parameter distr

 9.19. Size:1559K  infineon
 igw50n60h3 rev1 2g.pdf

IGBT High speed IGBT in Trench and Fieldstop technology IGW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI maximum junction temperature 175 C G

 9.20. Size:461K  infineon
 igw50n60t.pdf

IGW50N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers

 9.21. Size:416K  infineon
 ikw50n60t.pdf

IKW50N60T TrenchStop Series q Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technolog

 9.22. Size:133K  ixys
 ixsn50n60bd3.pdf

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr

 9.23. Size:103K  ixys
 ixsx50n60au1 ixsx50n60au1s.pdf

Preliminary data VCES = 600 V IXSX50N60AU1 IGBT with Diode IXSX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack Short Circuit SOA Capability TO-247 Hole-less SMD (50N60AU1S) C (TAB) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-247 Hole-less VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (50N60AU1) VGES Continuous 20 V VGEM Transient 30 V

 9.24. Size:494K  ixys
 ixgx50n60b2d1.pdf

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

 9.25. Size:147K  ixys
 ixgn50n60bd3 ixgn50n60bd2.pdf

IXGN 50N60BD2 VCES = 600 V HiPerFASTTM IGBT IXGN 50N60BD3 IC25 = 75 A with HiPerFRED VCE(sat) = 2.5 V tfi = 150 ns Buck & boost configurations ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V 4 IC25 TC = 25 C75 A 3 IC90

 9.26. Size:121K  ixys
 ixgx50n60a2d1.pdf

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I

 9.27. Size:198K  ixys
 ixgq50n60b4d1.pdf

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 100 A Tab IC

 9.28. Size:399K  ixys
 ixgj50n60c4d1.pdf

Preliminary Technical Information VCES = 600V High-Gain IGBT IXGJ50N60C4D1 IC110 = 21A w/ Diode VCE(sat) 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E Isolated Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate E

 9.29. Size:218K  ixys
 ixga50n60b4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1

 9.30. Size:583K  ixys
 ixgt50n60b2.pdf

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 9.31. Size:88K  ixys
 ixgx50n60bd1.pdf

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A PLUS247 IC90 TC = 90 C50 A (IXGX) ICM TC = 25 C, 1 m

 9.32. Size:64K  ixys
 ixgh50n60a.pdf

IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2

 9.33. Size:136K  ixys
 ixgx50n60au1.pdf

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

 9.34. Size:196K  ixys
 ixgh50n60c4d1.pdf

 9.35. Size:133K  ixys
 ixgn50n60b.pdf

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 V tfi(typ) = 120ns Preliminary data sheet E Symbol Test Conditions Maximum Ratings SOT-227B miniBLOC E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C75 A C IC90 TC = 90 C50 A G = Gate, C = Collector

 9.36. Size:196K  ixys
 ixgq50n60c4d1.pdf

 9.37. Size:514K  ixys
 ixgr50n60b2.pdf

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C

 9.38. Size:216K  ixys
 ixgp50n60c4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C

 9.39. Size:174K  ixys
 ixxh50n60c3.pdf

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3 IC110 = 50A GenX3TM VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30

 9.40. Size:224K  ixys
 ixxp50n60b3.pdf

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG

 9.41. Size:493K  ixys
 ixgx50n60c2d1.pdf

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

 9.42. Size:136K  ixys
 ixgx50n60au1s.pdf

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

 9.43. Size:133K  ixys
 ixsn50n60bd2.pdf

IXSN 50N60BD2 VCES = 600 V HIGH Speed IGBT IXSN 50N60BD3 IC25 = 75 A with HiPerFRED VCEsat) = 2.5 V Short Circuit SOA Capability tfi = 150 ns Buck & boost configurations Preliminary data ...BD2 ...BD3 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E 153432 1 VCES TJ = 25 C to 150 C 600 V 2 VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Tr

 9.44. Size:218K  ixys
 ixgh50n60b4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1

 9.45. Size:216K  ixys
 ixgh50n60c4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C

 9.46. Size:193K  ixys
 ixxh50n60c3d1.pdf

Advance Technical Information VCES = 600V XPTTM 600V IXXH50N60C3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 2.30V tfi(typ) = 42ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Tra

 9.47. Size:628K  ixys
 ixgk50n60c2d1 ixgx50n60c2d1.pdf

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

 9.48. Size:506K  ixys
 ixgr50n60c2.pdf

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A

 9.49. Size:493K  ixys
 ixgk50n60c2d1.pdf

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

 9.50. Size:216K  ixys
 ixyn150n60b3.pdf

 9.51. Size:192K  ixys
 ixxh50n60b3d1.pdf

Advance Technical Information VCES = 600V XPTTM IGBT 600V IXXH50N60B3D1 IC110 = 50A GenX3TM w/ Diode VCE(sat) 1.80V tfi(typ) = 135ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGE

 9.52. Size:72K  ixys
 ixsk50n60au1.pdf

IGBT with Diode IXSK 50N60AU1 VCES = 600 V IC25 = 75 A Combi Pack VCE(sat) = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C50 A E = Emit

 9.53. Size:218K  ixys
 ixgp50n60b4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1

 9.54. Size:585K  ixys
 ixgh50n60b2 ixgt50n60b2.pdf

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 9.55. Size:73K  ixys
 ixsh50n60b.pdf

IXSH 50N60B IGBT High Speed V bp = 600 V I OR = 75 A Short Circuit SOA Capability V bE F = 2.5 V m = = Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G =Eq^_F VGES Continuous 20 V C E VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Co

 9.56. Size:98K  ixys
 ixsx50n60bd1.pdf

IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V TO-264 AA (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

 9.57. Size:494K  ixys
 ixgk50n60b2d1.pdf

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

 9.58. Size:142K  ixys
 ixsx50n60bu1.pdf

IGBT with Diode IXSK 50N60BU1 VCES = 600 V IXSX 50N60BU1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-264 AA VGES Continuous 20 V (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

 9.59. Size:98K  ixys
 ixsk50n60bd1.pdf

IGBT with Diode IXSK 50N60BD1 VCES = 600 V IXSX 50N60BD1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V TO-264 AA (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

 9.60. Size:181K  ixys
 ixgh50n60b.pdf

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

 9.61. Size:216K  ixys
 ixga50n60c4.pdf

VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C

 9.62. Size:563K  ixys
 ixgr50n60bd1.pdf

 9.63. Size:584K  ixys
 ixgh50n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.64. Size:224K  ixys
 ixxh50n60b3.pdf

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG

 9.65. Size:198K  ixys
 ixgh50n60b4d1.pdf

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 100 A Tab IC

 9.66. Size:514K  ixys
 ixgr50n60b2d1.pdf

IXGR 50N60B2 VCES = 600 V HiPerFASTTM IGBT IXGR 50N60B2D1 IC25 = 68 A ISOPLUS247TM VCE(sat) = 2.2 V B2-Class High Speed IGBTs tfi(typ) = 65 ns (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G (ISOLATED TAB) VGES C

 9.67. Size:181K  ixys
 ixgj50n60b.pdf

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

 9.68. Size:583K  ixys
 ixgh50n60b2.pdf

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 9.69. Size:627K  ixys
 ixgk50n60b2d1 ixgx50n60b2d1.pdf

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

 9.70. Size:284K  ixys
 mmix2s50n60b4d1.pdf

Advance Technical Information VCES = 600V Low Gain IGBT MMIX2S50N60B4D1 IC90 = 30A w/ Diode ES1 G1 ES2 G2 VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 50ns ES1 E1 Short Circuit SOA Capability C1E2 C2 G1 ES2 G2 E1 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V C1E2 VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C2 VGES

 9.71. Size:181K  ixys
 ixgk50n60b ixgt50n60b ixgj50n60b.pdf

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

 9.72. Size:121K  ixys
 ixgk50n60a2d1.pdf

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I

 9.73. Size:231K  ixys
 ixxh150n60c3.pdf

Advance Technical Information VCES = 600V 600V XPTTM IGBT IXXH150N60C3 IC110 = 150A GenX3TM VCE(sat) 2.5V tfi(typ) = 75ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Co

 9.74. Size:586K  ixys
 ixgh50n60c2 ixgt50n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.75. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient

 9.76. Size:563K  ixys
 ixgr50n60b.pdf

 9.77. Size:224K  ixys
 ixxa50n60b3.pdf

Preliminary Technical Information VCES = 600V 600V XPTTM IGBTs IXXA50N60B3 IC110 = 50A GenX3TM IXXP50N60B3 VCE(sat) 1.80V IXXH50N60B3 TO-263 AA (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220AB (IXXP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VG

 9.78. Size:506K  ixys
 ixgr50n60c2d1.pdf

IXGR 50N60C2 VCES = 600 V HiPerFASTTM IXGR 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.7 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 VCES TJ = 25 C to 150 C 600 V (IXGR) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V (ISOLATED TAB) VGEM Transient 30 V IC25 TC = 25 C75 A

 9.79. Size:64K  ixys
 ixgh50n60as.pdf

IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2

 9.80. Size:149K  ixys
 ixgk50n60au1.pdf

HiPerFASTTM IXGK 50N60AU1 VCES = 600 V IGBT with Diode IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C50 A E = Emitter,

 9.81. Size:287K  ixys
 ixsh50n60b ixsh50n60bs.pdf

 9.82. Size:142K  ixys
 ixsk50n60bu1.pdf

IGBT with Diode IXSK 50N60BU1 VCES = 600 V IXSX 50N60BU1 IC25 = 75 A VCE(sat) = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-264 AA VGES Continuous 20 V (IXSK) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A IC90 TC = 90 C50 A

 9.83. Size:184K  ixys
 ixfh50n60x ixfq50n60x ixft50n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X RDS(on) 73m IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D VDGR TJ = 25 C to 1

 9.84. Size:88K  ixys
 ixgk50n60bd1.pdf

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A PLUS247 IC90 TC = 90 C50 A (IXGX) ICM TC = 25 C, 1 m

 9.85. Size:167K  ixys
 ixgk50n50bu1 ixgk50n60bu1.pdf

VCES IC25 VCE(sat) tfi HiPerFASTTM IXGK 50N50BU1 500 V 75 A 2.3 V 100ns IGBT with Diode 600 V 75 A 2.5 V 120ns IXGK 50N60BU1 Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings TO-264 AA 50N50 50N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V G VGES Continuous 20 20 V C E VGEM Transient 30 30 V IC25 TC = 25 C75 75 A G = Ga

 9.86. Size:181K  ixys
 ixgk50n60b.pdf

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

 9.87. Size:584K  ixys
 ixgt50n60c2.pdf

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 9.88. Size:140K  ixys
 ixgr50n60a2u1.pdf

Advance Technical Information IXGR 50N60A2U1 VCES = 600 V IGBT with Diode IC25 = 75 A Low Saturation Voltage IGBT with VCE(sat) = 1.7 V Low Forward Drop Diode Electrically Isolated Mounting Tab Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247(IXGR) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V

 9.89. Size:87K  onsemi
 ngtb50n60s1wg.pdf

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 9.90. Size:186K  onsemi
 ngtb50n60flwg.pdf

NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R

 9.91. Size:177K  onsemi
 ngtb50n60fwg.pdf

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 50 A, 600 V Low Switching Loss Reduces System Power Dissipation V

 9.92. Size:174K  onsemi
 ngtg50n60fwg.pdf

 9.93. Size:203K  onsemi
 ngtb50n60swg.pdf

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

 9.94. Size:243K  onsemi
 ngtb50n60l2.pdf

NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V

 9.95. Size:591K  onsemi
 fdbl0150n60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.96. Size:237K  onsemi
 ngtb50n60fl2wg.pdf

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

 9.97. Size:139K  onsemi
 ngtb50n60s.pdf

NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

 9.98. Size:87K  onsemi
 ngtb50n60s1.pdf

NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 9.99. Size:305K  onsemi
 ngtb50n60l2wg.pdf

NGTB50N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 50 A, 600 V

 9.100. Size:237K  onsemi
 ngtb50n60fl2.pdf

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

 9.101. Size:169K  onsemi
 ngtg50n60flwg.pdf

NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 9.102. Size:565K  fuji
 fgw50n60h.pdf

http //www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

 9.103. Size:625K  fuji
 fgw50n60vda.pdf

http //www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit

 9.104. Size:560K  fuji
 fgw50n60hd.pdf

http //www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

 9.105. Size:569K  fuji
 fgw50n60hc.pdf

http //www.fujielectric.com/products/semiconductor/ FGW50N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

 9.106. Size:434K  kec
 kmb050n60p.pdf

KMB050N60P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ + correction , electronic lamp ballasts based o

 9.107. Size:567K  kec
 kgt50n60kda.pdf

SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description B KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.20

 9.108. Size:481K  kec
 kmb050n60pa.pdf

KMB050N60PA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, O C DC/DC converters and a load switch in battery powered applications F E DIM MILLIMETERS G _ + A 9.9 0.2 B B 15.95 MAX FEATURES Q C 1.3+0.1/-0.05 _ VDSS= 60V, ID= 50A I + D 0.8 0.1 _ E 3.6 + 0.2

 9.109. Size:1554K  kec
 kgf50n60kda.pdf

SEMICONDUCTOR KGF50N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T

 9.110. Size:62K  microsemi
 apt50n60jccu2.pdf

APT50N60JCCU2 VDSS = 600V ISOTOP Boost chopper RDSon = 45m max @ Tj = 25 C Super Junction ID = 50A @ Tc = 25 C MOSFET Power Module Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch D Features G - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge S - Avalanche e

 9.111. Size:106K  crhj
 bt50n60anf.pdf

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c

 9.112. Size:244K  iqxprz
 iqib150n60b3.pdf

IQIB150N60B3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed Very low VCE(sat 1 3 Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 2 4 High ruggedness, temperature stability - Parallel switching capability Pb-free lead finish

 9.113. Size:232K  iqxprz
 iqab50n60d1.pdf

IQAB50N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time 5us Designed for frequency converter and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switch

 9.114. Size:105K  wuxi china
 bt50n60anf.pdf

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c

 9.115. Size:1471K  cn vbsemi
 vbgn50n60.pdf

VBGN50N60 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us

 9.116. Size:1532K  cn marching-power
 mptd50n60n.pdf

MPTD50N60N FEATURES BVDSS=60V, ID=50A RDS(on) 17m (Max)@VGS=10V RDS(on) 20m (Max)@VGS=4.5V 100% avalanche tested TO-252 RoHS compliant APPLICATIONS Load Switch Power Management Motor Drive Application Device Marking and Package Information Ordering code Package Marking MPTD50N60N TO-252 MPTD50N60N Absolute Maximum Ratings TC = 25 unless otherw

 9.117. Size:1617K  cn marching-power
 mptp50n60n.pdf

MPTP50N60N FEATURES BVDSS=60V, ID=50A RDS(on) 17m (Max)@VGS=10V RDS(on) 20m (Max)@VGS=4.5V 100% avalanche tested RoHS compliant TO-220 APPLICATIONS Load Switch Power Management Motor Drive Application Device Marking and Package Information Ordering code Package Marking MPTP50N60N TO-220 MPTP50N60N Absolute Maximum Ratings TC = 25 unless otherw