5N50L-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 5N50L-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO252

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5N50L-TN3-R Datasheet (PDF)

..1. Size:235K utc
5n50l-tf3-t 5n50g-tf3-t 5n50l-tf1-t 5n50g-tf1-t 5n50l-tn3-r 5n50g-tn3-r 5n50l-t2q-t 5n50g-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220FTO-262The UTC 5N50 is an N-channel power MOSFET adopting UTCs advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance.

9.1. Size:517K international rectifier
irfib5n50l.pdf

PD - 94522SMPS MOSFETIRFIB5N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. IDl Switch Mode Power Supply (SMPS)500V 0.67 73ns 4.7Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessTO-220 Full-Pakl Fully Chara

9.2. Size:174K international rectifier
irfps35n50lpbf.pdf

PD- 95140IRFPS35N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPS Trr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.125 170ns 34A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

9.3. Size:123K international rectifier
irfps35n50l.pdf

PD- 94227IRFPS35N50LSMPS MOSFETApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply VDSS RDS(on) typ. IDl High Speed Power Switching500V 0.125 34Al ZVS and High Frequency Circuitl PWM InvertersBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessl Fully Ch

9.4. Size:197K international rectifier
irfib5n50lpbf.pdf

PD - 95390IRFIB5N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

9.5. Size:129K vishay
irfps35n50lpbf.pdf

IRFPS35N50L, SiHFPS35N50LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.125RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 230COMPLIANTRequirementsQgs (nC) 65 Enhanced dV/dt Capabilities Offer Improved Ruggedne

9.6. Size:806K vishay
irfib5n50lpbf.pdf

IRFIB5N50L, SiHFIB5N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.67COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 45ReqirementsQgs (nC) 13Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

9.7. Size:167K ixys
ixta15n50l2.pdf

Linear L2TM VDSS = 500VIXTA15N50L2Power MOSFETs ID25 = 15AIXTP15N50L2 RDS(on) 480m w/ Extended FBSOAIXTH15N50L2N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 20 V

9.8. Size:133K ixys
ixth15n50l2-ixtp15n50l2.pdf

Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30

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