5N60G-TF2-T Datasheet. Equivalente

 ..1. Size:324K  utc
 5n60l-ta3-t 5n60g-ta3-t 5n60l-tf1-t 5n60g-tf1-t 5n60l-tf2-t 5n60g-tf2-t 5n60l-tf3-t 5n60g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 6.1. Size:324K  utc
 5n60l-tf3t-t 5n60g-tf3t-t 5n60l-tm3-t 5n60g-tm3-t 5n60l-tn3-r 5n60g-tn3-r 5n60l-k08-5060-r 5n60g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 9.1. Size:333K  infineon
 sgp15n60 sgw15n60g.pdf

SGP15N60 SGW15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

 9.2. Size:791K  infineon
 sgb15n60g.pdf

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for - Motor controls - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 9.3. Size:1150K  infineon
 skb15n60g.pdf

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight

 9.4. Size:491K  silikron
 ssf5n60g.pdf

SSF5N60G Main Product Characteristics VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.5. Size:370K  nell
 5n60a 5n60af 5n60g.pdf

RoHS 5N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 600Volts) DESCRIPTION D The Nell 5N60 is a three-terminal silicon D device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

 9.6. Size:1198K  magnachip
 mdf15n60gth mdp15n60gth.pdf

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 15A @ V = 10V D GS state resistance, high switching performance and excellent R 0.40 @ V = 10V DS(ON) GS quality. Applications These devices are sui

 9.7. Size:363K  ncepower
 ncep055n60gu.pdf

http //www.ncepower.com NCEP055N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N60GU uses Super Trench II technology that is VDS =60V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m (Typ.) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p

 9.8. Size:333K  ncepower
 ncep025n60g.pdf

http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)