5N65KG-TN3-R Todos los transistores

 

5N65KG-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 5N65KG-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO252

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5N65KG-TN3-R Datasheet (PDF)

 ..1. Size:242K  utc
5n65kl-tm3-t 5n65kg-tm3-t 5n65kl-tms-t 5n65kg-tms-t 5n65kl-tms2-t 5n65kg-tms2-t 5n65kl-tms4-t 5n65kg-tms4-t 5n65kl-tn3-r 5n65kg-tn3-r 5n65kg-tnd-r.pdf

5N65KG-TN3-R
5N65KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

 ..2. Size:243K  utc
5n65kl-tm3-t 5n65kg-tm3-t 5n65kl-tms-t 5n65kg-tms-t 5n65kl-tms2-t 5n65kg-tms2-t 5n65kl-tms4-t 5n65kg-tms4-t 5n65kl-tn3-r 5n65kg-tn3-r 5n65kl-tnd-r.pdf

5N65KG-TN3-R
5N65KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at

 5.1. Size:243K  utc
5n65kl-ta3-t 5n65kg-ta3-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tf1-t 5n65kg-tf1-t 5n65kl-tf2-t 5n65kg-tf2-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kg-tnd-r.pdf

5N65KG-TN3-R
5N65KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at

 6.1. Size:242K  utc
5n65kl-ta3-t 5n65kg-ta3-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tf1-t 5n65kg-tf1-t 5n65kl-tf2-t 5n65kg-tf2-t 5n65kl-tf3-t 5n65kg-tf3-t 5n65kl-tnd-r.pdf

5N65KG-TN3-R
5N65KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at po

 9.1. Size:836K  1
swd5n65k.pdf

5N65KG-TN3-R
5N65KG-TN3-R

SW5N65K N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 650V ID : 5A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 10.3nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application: LED, Charge, Adaptor 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFE

 9.2. Size:223K  utc
5n65k.pdf

5N65KG-TN3-R
5N65KG-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 5N65K Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K is a high voltage power MOSFET designed to 1have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche TO-220Fcharacteristics. This power MOSFET is usually used in high speed switching applications a

 9.3. Size:327K  kec
kgf75n65kdf.pdf

5N65KG-TN3-R
5N65KG-TN3-R

SEMICONDUCTORKGF75N65KDFTECHNICAL DATAGeneral DescriptionBKEC Field Stop Trench IGBTs offer low switching losses, high energy AOS Kefficiency and short circuit ruggedness.It is designed for applications such as Power Factor Correction(PFC),Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and GeneralDIM MILLIMETERS_+A 15.90 0.30Converters._B5.00 + 0

 9.4. Size:718K  oriental semi
ost15n65krf.pdf

5N65KG-TN3-R
5N65KG-TN3-R

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 9.5. Size:655K  samwin
swt45n65k2.pdf

5N65KG-TN3-R
5N65KG-TN3-R

SW45N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 45A High ruggedness RDS(ON) : 61m Low RDS(ON) (Typ 61m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSF

 9.6. Size:650K  samwin
swt45n65k2f.pdf

5N65KG-TN3-R
5N65KG-TN3-R

SW45N65K2F N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 45A High ruggedness RDS(ON) : 66m Low RDS(ON) (Typ 66m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOS

 9.7. Size:667K  samwin
swd5n65k.pdf

5N65KG-TN3-R
5N65KG-TN3-R

SW5N65K N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 650V ID : 5A High ruggedness Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 10.3nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application: LED, Charger, Adaptor 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSF

 9.8. Size:578K  cn hmsemi
hms15n65i hms15n65k.pdf

5N65KG-TN3-R
5N65KG-TN3-R

HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

 9.9. Size:885K  cn hmsemi
hm5n65k hm5n65i.pdf

5N65KG-TN3-R
5N65KG-TN3-R

HM5N65K/HM5N65IHM5N65K / HM5N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switchi

 9.10. Size:285K  inchange semiconductor
5n65k.pdf

5N65KG-TN3-R
5N65KG-TN3-R

isc N-Channel MOSFET Transistor 5N65KFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 2.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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