5N65G-TM3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 5N65G-TM3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 54 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 42 nS
Conductancia de drenaje-sustrato (Cd): 55 pF
Resistencia entre drenaje y fuente RDS(on): 2.4 Ohm
Paquete / Cubierta: TO251
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5N65G-TM3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli
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UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en
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