5N65G-TF2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 5N65G-TF2-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO220F

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5N65G-TF2-T Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power suppli

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UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

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