60N06L-TQ2-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 60N06L-TQ2-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO263

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60N06L-TQ2-R datasheet

 ..1. Size:310K  utc
 60n06l-ta3-t 60n06g-ta3-t 60n06l-tf3-t 60n06g-tf3-t 60n06l-tq2-r 60n06g-tq2-r 60n06l-tq2-t 60n06g-tq2-t.pdf pdf_icon

60N06L-TQ2-R

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge (

 8.1. Size:58K  philips
 php60n06lt 2.pdf pdf_icon

60N06L-TQ2-R

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance

 8.2. Size:70K  philips
 php60n06lt phb60n06lt.pdf pdf_icon

60N06L-TQ2-R

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance

 8.3. Size:88K  onsemi
 ntb60n06l ntp60n06l ntp60n06l ntb60n06l.pdf pdf_icon

60N06L-TQ2-R

NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 60 AMPERES, 60 VOLTS power supplies, converters, power motor controls and bridge circuits. RDS(on) = 16 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies C

MOSTRAR MÁS

Otros transistores... 5N65G-TN3-R, 5N65G-TF2-T, 5N65L-TF3T-T, 5N65G-TF3T-T, 60N06L-TA3-T, 60N06G-TA3-T, 60N06L-TF3-T, 60N06G-TF3-T, 18N50, 60N06G-TQ2-R, 60N06L-TQ2-T, 60N06G-TQ2-T, 6N60KL-TA3-T, 6N60KG-TA3-T, 6N60KL-TF3-T, 6N60KG-TF3-T, 6N60KL-TF1-T