60N06L-TQ2-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 60N06L-TQ2-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 54 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 400 pF
   Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET 60N06L-TQ2-T

60N06L-TQ2-T Datasheet (PDF)

..1. Size:310K utc
60n06l-ta3-t 60n06g-ta3-t 60n06l-tf3-t 60n06g-tf3-t 60n06l-tq2-r 60n06g-tq2-r 60n06l-tq2-t 60n06g-tq2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge (

8.1. Size:58K philips
php60n06lt 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V)g Low thermal resistance

8.2. Size:70K philips
php60n06lt phb60n06lt.pdf

8.3. Size:88K onsemi
ntb60n06l ntp60n06l ntp60n06l ntb60n06l.pdf

NTP60N06L, NTB60N06LPower MOSFET60 Amps, 60 Volts,Logic LevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in60 AMPERES, 60 VOLTSpower supplies, converters, power motor controls and bridge circuits.RDS(on) = 16 mWFeaturesN-Channel Pb-Free Packages are AvailableDTypical Applications Power Supplies C

8.4. Size:293K cystek
mtb60n06l3.pdf

Spec. No. : C708L3 Issued Date : 2009.05.26 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06L3 ID 5.9A41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: