60N06G-TQ2-T Todos los transistores

 ..1. Size:310K  utc
 60n06l-ta3-t 60n06g-ta3-t 60n06l-tf3-t 60n06g-tf3-t 60n06l-tq2-r 60n06g-tq2-r 60n06l-tq2-t 60n06g-tq2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18m @VGS = 10 V * Ultra low gate charge (

 8.1. Size:85K  onsemi
 ntb60n06g ntp60n06 ntp60n06 ntb60n06.pdf

NTP60N06, NTB60N06 Power MOSFET 60 V, 60 A, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 60 VOLTS, 60 AMPERES Features RDS(on) = 14 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters Pow

 8.2. Size:609K  cet
 cep60n06g ceb60n06g.pdf

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

 8.3. Size:1579K  cn vbsemi
 ntb60n06g.pdf

NTB60N06G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sourc