6N65KL-TN3-R Todos los transistores

 

6N65KL-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 6N65KL-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 22.5 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO252

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6N65KL-TN3-R Datasheet (PDF)

 ..1. Size:281K  utc
6n65kl-tms-t 6n65kg-tms-t 6n65kl-tms2-t 6n65kg-tms2-t 6n65kl-tms4-t 6n65kg-tms4-t 6n65kl-tn3-r 6n65kg-tn3-r 6n65kl-tnd-r 6n65kg-tnd-r.pdf

6N65KL-TN3-R
6N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi

 6.1. Size:281K  utc
6n65kl-ta3-t 6n65kg-ta3-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tf1-t 6n65kg-tf1-t 6n65kl-tf2-t 6n65kg-tf2-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tm3-t 6n65kg-tm3-t.pdf

6N65KL-TN3-R
6N65KL-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi

 9.1. Size:901K  st
stf6n65k3 stfi6n65k3 stu6n65k3.pdf

6N65KL-TN3-R
6N65KL-TN3-R

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

 9.2. Size:901K  st
stfi6n65k3 stu6n65k3.pdf

6N65KL-TN3-R
6N65KL-TN3-R

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

 9.3. Size:987K  samwin
swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf

6N65KL-TN3-R
6N65KL-TN3-R

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat

 9.4. Size:1213K  samwin
sw16n65k swp16n65k swf16n65k swb16n65k.pdf

6N65KL-TN3-R
6N65KL-TN3-R

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 9.5. Size:1143K  samwin
swp16n65k swf16n65k swb16n65k.pdf

6N65KL-TN3-R
6N65KL-TN3-R

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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