6N70KL-TMS2-T Todos los transistores

 ..1. Size:214K  utc
 6n70kl-tms-t 6n70kg-tms-t 6n70kl-tms2-t 6n70kg-tms2-t 6n70kl-tms4-t 6n70kg-tms4-t 6n70kl-tn3-r 6n70kg-tn3-r 6n70kl-tnd-r 6n70kg-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

 5.1. Size:214K  utc
 6n70kl-tf3-t 6n70kg-tf3-t 6n70kl-tf1-t 6n70kg-tf1-t 6n70kl-tf2-t 6n70kg-tf2-t 6n70kl-tf3t-t 6n70kg-tf3t-t 6n70kl-tm3-t 6n70kg-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

 9.1. Size:444K  silan
 svf6n70mjg svf6n70dtr svf6n70k svf6n70mn.pdf

SVF6N70MJG/D/K/N 6A 700V N 2 SVF6N70MJG/D/K/N N MOS 1 F-CellTM VDMOS 3 1.

 9.2. Size:964K  samwin
 swf6n70k swn6n70k swd6n70k.pdf

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 6A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1

 9.3. Size:862K  samwin
 sw6n70k swf6n70k swn6n70k swd6n70k.pdf

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 700V High ruggedness ID 6A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source

 9.4. Size:1075K  samwin
 swu16n70k swb16n70k swf16n70k.pdf

SW16N70K N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features TO-262 TO-220F BVDSS 700V TO-263 High ruggedness ID 16A Low RDS(ON) (Typ 0.23 )@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) 0.23 Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 Application DC-DC,LED,PC 2 2 3 3 3 1. Gate 2. Drain 3. S

 9.5. Size:494K  convert
 cs6n70f cs6n70k cs6n70u cs6n70d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N70F,CS6N70K,CS6N70U,CS6N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N70F TO-220F

 9.6. Size:713K  convert
 csfr6n70f csfr6n70k csfr6n70u csfr6n70d.pdf

CSFR6N70F,CSFR6N70K nvert Suzhou Convert Semiconductor Co ., Ltd. CSFR6N70U,CSFR6N70D 700V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package In

 9.7. Size:1192K  cn hmsemi
 hm6n70k.pdf

HM6N70K General Description VDSS 700 V HM6N70K, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an