7N65KL-TA3-T Todos los transistores

 ..1. Size:264K  utc
 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t 7n65kg-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of

 ..2. Size:268K  utc
 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of s

 ..3. Size:199K  utc
 7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tq2-t 7n65kg-tq2-t 7n65kl-tq2-r 7n65kg-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

 6.1. Size:268K  utc
 7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kg-tf2-t 7n65kl-tf3t-t 7n65kg-tf3t-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of s

 6.2. Size:264K  utc
 7n65kl-tf3t-t 7n65kg-tf3t-t 7n65kl-tm3-t 7n65kg-tm3-t 7n65kl-tn3-r 7n65kg-tn3-r 7n65kl-t2q-t 7n65kg-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of

 9.1. Size:199K  utc
 7n65k.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

 9.2. Size:810K  samwin
 sw47n65k2 swt47n65k2.pdf

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 47A High ruggedness RDS(ON) 56m Low RDS(ON) (Typ 56m )@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

 9.3. Size:748K  samwin
 swt47n65k2.pdf

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 47A High ruggedness RDS(ON) 56m Low RDS(ON) (Typ 56m )@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This

 9.4. Size:739K  samwin
 swt47n65k2f.pdf

SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V ID 47A High ruggedness Low RDS(ON) (Typ 59m )@VGS=10V RDS(ON) 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th

 9.5. Size:733K  samwin
 swt47n65k.pdf

SW47N65K N-channel Enhanced mode TO-247 MOSFET Features BVDSS 650V TO-247 ID 47A High ruggedness Low RDS(ON) (Typ 60m )@VGS=10V RDS(ON) 60m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 9.6. Size:1089K  samwin
 swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf

SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 0.57 )@VGS=10V RDS(ON) 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application Charge,LED,PC Power 3 3 3

 9.7. Size:618K  samwin
 swt47n65kf.pdf

SW47N65KF N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V High ruggedness ID 47A Low RDS(ON) (Typ 60m )@VGS=10V RDS(ON) 60m Low Gate Charge (Typ 152nC) Extremely Low trr and Qrr 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source

 9.8. Size:1121K  samwin
 swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf

SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO- 251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS 650V ID 7A High ruggedness Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica

 9.9. Size:427K  convert
 cs7n65f cs7n65p cs7n65k.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS7N65F,CS7N65P, CS7N65K 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N65F TO-220F CS7N65

 9.10. Size:501K  cn hmsemi
 hm7n65k hm7n65i.pdf

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw

 9.11. Size:485K  cn hmsemi
 hms7n65i hms7n65k.pdf

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe