7N65KL-TQ2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 7N65KL-TQ2-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 29 nC
Tiempo de subida (tr): 80 nS
Conductancia de drenaje-sustrato (Cd): 180(max) pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO263
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7N65KL-TQ2-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of
7n65kl-ta3-t 7n65kg-ta3-t 7n65kl-tf3-t 7n65kg-tf3-t 7n65kl-tf1-t 7n65kg-tf1-t 7n65kl-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s
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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of
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