7N65KG-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 7N65KG-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 22.5 nC
   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 88 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO252

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7N65KG-TN3-R Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of s

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UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of

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UNISONIC TECHNOLOGIES CO., LTD 7N65K Preliminary Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switch

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