7NM70L-TN3-R Todos los transistores

 

7NM70L-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 7NM70L-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 223 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

7NM70L-TN3-R Datasheet (PDF)

 ..1. Size:306K  utc
 7nm70l-ta3-t 7nm70g-ta3-t 7nm70l-tf3-t 7nm70g-tf3-t 7nm70l-tf1-t 7nm70g-tf1-t 7nm70l-tf2-t 7nm70g-tf2-t 7nm70l-tn3-r.pdf pdf_icon

7NM70L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte

 6.1. Size:306K  utc
 7nm70l-tf3t-t 7nm70g-tf3t-t 7nm70l-tm3-t 7nm70g-tm3-t 7nm70l-tms2-t 7nm70g-tms2-t 7nm70l-tmn2-t 7nm70g-tmn2-t 7nm70g-tn3-r.pdf pdf_icon

7NM70L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 7NM70 Power MOSFET 7.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM70 is a Super Junction MOSFET Structure and isdesigned to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used atDC-DC, AC-DC converte

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History: 2SJ182S | IRF7103PBF | STK28N3LLH5 | NVMFS020N06C | IPD12CN10NG | NCEAP40T17AD | WSD2012DN25

 

 
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