8N60KG-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8N60KG-TF3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 89 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO220F
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8N60KG-TF3-T Datasheet (PDF)
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Otros transistores... 7NM70G-TN3-R , 8N60KL-TA3-T , 8N60KG-TA3-T , 8N60KL-TF1-T , 8N60KG-TF1-T , 8N60KL-TF2-T , 8N60KG-TF2-T , 8N60KL-TF3-T , IRFP450 , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T , 8N60G-TA3-T , 8N60L-TF1-T , 8N60G-TF1-T , 8N60L-TF2-T , 8N60G-TF2-T .
History: VBM1402 | HY4306B6 | IXFT12N100F | BRFL13N50 | 2SK1478 | CEF02N6G | 2SK65
History: VBM1402 | HY4306B6 | IXFT12N100F | BRFL13N50 | 2SK1478 | CEF02N6G | 2SK65



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