8N60G-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 8N60G-TF3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60.5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220F

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8N60G-TF3-T Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

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nceap018n60gu.pdf

NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E

9.2. Size:1124K ncepower
ncep018n60gu.pdf

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

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