8N65KG-TN3-R Todos los transistores

 ..1. Size:202K  utc
 8n65kl-tf3t-t 8n65kg-tf3t-t 8n65kl-tm3-t 8n65kg-tm3-t 8n65kl-tms-t 8n65kg-tms-t 8n65kl-tn3-r 8n65kg-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

 6.1. Size:202K  utc
 8n65kl-ta3-t 8n65kg-ta3-t 8n65kl-tf3-t 8n65kg-tf3-t 8n65kl-tf1-t 8n65kg-tf1-t 8n65kl-tf2-t 8n65kg-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

 9.1. Size:654K  samwin
 swt38n65k2.pdf

SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 38A High ruggedness RDS(ON) 79m Low RDS(ON) (Typ 79m )@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This

 9.2. Size:675K  samwin
 swu8n65k.pdf

SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS 650V TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.53 )@VGS=10V RDS(ON) 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS

 9.3. Size:612K  samwin
 swt38n65k.pdf

SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V ID 38A High ruggedness Low RDS(ON) (Typ 0.09 )@VGS=10V RDS(ON) 0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application Charger LED UPS Servicer 1. Gate 2. Drain 3. Source 3 General Description

 9.4. Size:860K  samwin
 swt38n65k2f swx38n65k2f.pdf

SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS 650V ID 38A High ruggedness Low RDS(ON) (Typ 83m )@VGS=10V RDS(ON) 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener

 9.5. Size:707K  samwin
 sw38n65kf swt38n65kf.pdf

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 38A High ruggedness RDS(ON) 95m Low RDS(ON) (Typ 95m )@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p

 9.6. Size:621K  samwin
 swt38n65kf.pdf

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS 650V Features ID 38A High ruggedness RDS(ON) 95m Low RDS(ON) (Typ 95m )@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This

 9.7. Size:797K  cn hmsemi
 hms8n65k hms8n65i.pdf

HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.