9N90L-TC3-T Todos los transistores

 

9N90L-TC3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 9N90L-TC3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO230
 

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9N90L-TC3-T Datasheet (PDF)

 ..1. Size:296K  utc
 9n90l-tc3-t 9n90g-tc3-t 9n90l-tf1-t 9n90g-tf1-t 9n90l-tf2-t 9n90g-tf2-t 9n90l-t3p-t 9n90g-t3p-t 9n90l-t3n-t 9n90g-t3n-t 9n90l-t47-t 9n90g-t47-t.pdf pdf_icon

9N90L-TC3-T

UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

 9.1. Size:298K  utc
 9n90l.pdf pdf_icon

9N90L-TC3-T

UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION 1The UTC 9N90 uses UTCs advanced proprietary, planar TO-247stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 1.4 @VGS = 10 V

 9.2. Size:217K  inchange semiconductor
 9n90l.pdf pdf_icon

9N90L-TC3-T

isc N-Channel MOSFET Transistor 9N90LDESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V

Otros transistores... 8N80L-TA3-T , 8N80G-TA3-T , 8N80L-TF3-T , 8N80G-TF3-T , 8N80L-TF1-T , 8N80G-TF1-T , 8N80L-TF2-T , 8N80G-TF2-T , EMB04N03H , 9N90G-TC3-T , 9N90L-TF1-T , 9N90G-TF1-T , 9N90L-TF2-T , 9N90G-TF2-T , 9N90L-T3P-T , 9N90G-T3P-T , 9N90L-T3N-T .

History: AFN3030 | BRF7N65 | SVSP11N65SD2TR | 2N6453 | FTP10N40 | IPD50N04S4-08 | IPD220N06L3G

 

 
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