UF460G-T3P-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UF460G-T3P-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120(max) nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET UF460G-T3P-T
UF460G-T3P-T Datasheet (PDF)
uf460l-t3p-t uf460g-t3p-t uf460l-t47-t uf460g-t47-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
buf460.pdf
BUF460AVNPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOADAREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCEAPPLICATIONS: MOTOR CONTROL SMPS & UPSISOTOP WELDING EQUIPMENTINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Paramete
buf460av.pdf
BUF460AVNPN TRANSISTOR POWER MODULE EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCEAPPLICATIONS: MOTOR CONTROL SMPS & UPSISOTOP WELDING EQUIPMENTINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM
uf460.pdf
UNISONIC TECHNOLOGIES CO., LTD UF460 Power MOSFET 21 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UF460 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse cir
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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