UF740G-TF1-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UF740G-TF1-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO220F
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UF740G-TF1-T Datasheet (PDF)
uf740l-ta3-t uf740g-ta3-t uf740l-tf1-t uf740g-tf1-t uf740l-tf2-t uf740g-tf2-t uf740l-tf3-t uf740g-tf3-t uf740l-tq2-t uf740g-tq2-t uf740l-tq2-r uf740g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT
uf740.pdf
UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT
Otros transistores... UF640G-T2Q-R , UF640L-TQ2-T , UF640G-TQ2-T , UF640L-TQ2-R , UF640G-TQ2-R , UF740L-TA3-T , UF740G-TA3-T , UF740L-TF1-T , 2N7002 , UF740L-TF2-T , UF740G-TF2-T , UF740L-TF3-T , UF740G-TF3-T , UF740L-TQ2-T , UF740G-TQ2-T , UF740L-TQ2-R , UF740G-TQ2-R .
History: 7N80L-TF3T-T | GSM3402 | TPA65R600C | 7NM65L-TN3-R | MPSW60M082 | CEU83A3G | CEU6336
History: 7N80L-TF3T-T | GSM3402 | TPA65R600C | 7NM65L-TN3-R | MPSW60M082 | CEU83A3G | CEU6336
Liste
Recientemente añadidas las descripciónes de los transistores:
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