UF740G-TQ2-T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UF740G-TQ2-T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO263

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UF740G-TQ2-T datasheet

 ..1. Size:234K  utc
 uf740l-ta3-t uf740g-ta3-t uf740l-tf1-t uf740g-tf1-t uf740l-tf2-t uf740g-tf2-t uf740l-tf3-t uf740g-tf3-t uf740l-tq2-t uf740g-tq2-t uf740l-tq2-r uf740g-tq2-r.pdf pdf_icon

UF740G-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1 applications such as switching regulators, switching converters, 1 solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT

 9.1. Size:234K  utc
 uf740.pdf pdf_icon

UF740G-TQ2-T

UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching 1 applications such as switching regulators, switching converters, 1 solenoid, motor drivers, relay drivers. TO-220F1 TO-220F2 FEAT

Otros transistores... UF740G-TA3-T, UF740L-TF1-T, UF740G-TF1-T, UF740L-TF2-T, UF740G-TF2-T, UF740L-TF3-T, UF740G-TF3-T, UF740L-TQ2-T, 4N60, UF740L-TQ2-R, UF740G-TQ2-R, UF830KL-TA3-T, UF830KG-TA3-T, UF830KL-TF3-T, UF830KG-TF3-T, UF830KL-TF2-T, UF830KG-TF2-T