UF830KG-TF3-T Todos los transistores

 

UF830KG-TF3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UF830KG-TF3-T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO220F
 

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UF830KG-TF3-T Datasheet (PDF)

 ..1. Size:251K  utc
 uf830kl-ta3-t uf830kg-ta3-t uf830kl-tf3-t uf830kg-tf3-t uf830kl-tf2-t uf830kg-tf2-t uf830kl-tn3-r uf830kg-tn3-r.pdf pdf_icon

UF830KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, 1solenoid, motor drivers, relay drivers. TO-220F FEATURES *

 9.1. Size:315K  utc
 uf830l-tms-t uf830g-tms-t uf830l-tn3-r uf830g-tn3-r uf830l-t2q-t uf830g-t2q-t uf830l-tq2-r uf830g-tq2-r uf830l-tq2-t uf830g-tq2-t.pdf pdf_icon

UF830KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.2. Size:315K  utc
 uf830l-ta3-t uf830g-ta3-t uf830l-tf3-t uf830g-tf3-t uf830l-tf1-t uf830g-tf1-t uf830l-tf2-t uf830g-tf2-t uf830l-tm3-t uf830g-tm3-t.pdf pdf_icon

UF830KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON)

 9.3. Size:274K  utc
 uf830z.pdf pdf_icon

UF830KG-TF3-T

UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is TO-220Fdesigned for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers andrelated drivers. FEATURES * VDS = 500V * ID =

MOSTRAR MÁS

Otros transistores... UF740G-TF3-T , UF740L-TQ2-T , UF740G-TQ2-T , UF740L-TQ2-R , UF740G-TQ2-R , UF830KL-TA3-T , UF830KG-TA3-T , UF830KL-TF3-T , IRF2807 , UF830KL-TF2-T , UF830KG-TF2-T , UF830KL-TN3-R , UF830KG-TN3-R , UF830L-TA3-T , UF830G-TA3-T , UF830L-TF3-T , UF830G-TF3-T .

History: SIA416DJ | VBP15R50S | IRFS644A | ME2301S | 2N6793 | ME2301DN | APT5020SVFR

 

 
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