FDH5500F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDH5500F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO247 TO3P TO3PF
Búsqueda de reemplazo de FDH5500F085 MOSFET
FDH5500F085 Datasheet (PDF)
fdh5500.pdf

June 2008FDH5500N-Channel UltraFET Power MOSFET55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rating C
fdh5500 f085.pdf

October 2008FDH5500_F085N-Channel UltraFET Power MOSFET55V, 75A, 7m ApplicationsFeatures Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rat
fdh5500.pdf

isc N-Channel MOSFET Transistor FDH5500FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =55V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Otros transistores... FDG8850NZ , FDH038AN08A1 , FDH047AN08A0 , FDH055N15A , FDH3632 , STS3411A , FDH44N50 , FDH45N50FF133 , 50N06 , FDI030N06 , FDI038AN06A0 , FDI040N06 , FDI045N10AF102 , STS3409L , FDI150N10 , STS3409 , FDI3632 .



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