FDH5500F085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDH5500F085  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO247 TO3P TO3PF

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FDH5500F085 datasheet

 7.1. Size:425K  fairchild semi
 fdh5500.pdf pdf_icon

FDH5500F085

June 2008 FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Rating C

 7.2. Size:352K  fairchild semi
 fdh5500 f085.pdf pdf_icon

FDH5500F085

October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive Systems Models Peak Current vs Pulse Width Curve UIS Rat

 7.3. Size:299K  inchange semiconductor
 fdh5500.pdf pdf_icon

FDH5500F085

isc N-Channel MOSFET Transistor FDH5500 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V =55V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

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