FDH5500F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDH5500F085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 118 nC
Resistencia entre drenaje y fuente RDS(on): 0.007 Ohm
Paquete / Cubierta: TO247 TO3P TO3PF
Búsqueda de reemplazo de MOSFET FDH5500F085
FDH5500F085 Datasheet (PDF)
fdh5500.pdf
June 2008FDH5500N-Channel UltraFET Power MOSFET55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rating C
fdh5500 f085.pdf
October 2008FDH5500_F085N-Channel UltraFET Power MOSFET55V, 75A, 7m ApplicationsFeatures Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rat
fdh5500.pdf
isc N-Channel MOSFET Transistor FDH5500FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =55V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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