FDH5500F085 Todos los transistores

 

FDH5500F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDH5500F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 118 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO247 TO3P TO3PF

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FDH5500F085 Datasheet (PDF)

 7.1. Size:425K  fairchild semi
fdh5500.pdf

FDH5500F085 FDH5500F085

June 2008FDH5500N-Channel UltraFET Power MOSFET55V, 75A, 7m Applications Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rating C

 7.2. Size:352K  fairchild semi
fdh5500 f085.pdf

FDH5500F085 FDH5500F085

October 2008FDH5500_F085N-Channel UltraFET Power MOSFET55V, 75A, 7m ApplicationsFeatures Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A DC Linear Mode Control Typ Qg(10) = 118nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Rat

 7.3. Size:299K  inchange semiconductor
fdh5500.pdf

FDH5500F085 FDH5500F085

isc N-Channel MOSFET Transistor FDH5500FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V =55V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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