FDI038AN06A0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2010FDP038AN06A0 / FDI038AN06A0N-Channel PowerTrench MOSFET60V, 80A, 3.8mFeatures Applications rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive P

FDP038AN06A0 / FDI038AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 3.8 mFeatures Applications RDS(on) = 3.5 m ( Typ.) @ VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU QG(tot) = 96 nC ( Typ.) @ VGS = 10 V Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode

isc N-Channel MOSFET Transistor FDI038AN06A0FEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

June 2009FDI030N06 tmN-Channel PowerTrench MOSFET60V, 193A, 3.2mFeatures Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast Switching Speedcially tailored to minimize the on-state resistance and yetmaintain superior switching performan

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDI030N06FEATURESDrain Current I = 136A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor FDI036N10AFEATURESWith TO-262 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25