UK3018G-AL3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UK3018G-AL3-R
   Código: 3018G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT323

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UK3018G-AL3-R Datasheet (PDF)

..1. Size:136K utc
uk3018g-ae2-r uk3018g-al3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor contro

8.1. Size:136K utc
uk3018.pdf

9.1. Size:349K 1
suk3015.pdf

VDSS = 300 V, RDS(ON) = 0.15 N-channel Power MOSFET SUK3015 Data Sheet Description Package SUK3015 includes a low on-resistance N-channel TO220S power MOSFET with zener diode for ESD protection. The package of SUK3015 is TO220S that is surface (4) (4) mount package and high heat release. Features Automotive Qualified Low On Resistance (1) (2) (3) (3) (2) (1)

9.2. Size:127K utc
uk3019.pdf

UNISONIC TECHNOLOGIES CO., LTD UK3019 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION 3The UTC UK3019 is a silicon N-channel MOSFET which has been designed to minimize on-state resistance while it provides1rugged, reliable and fast switching performance. The product is 2particularly suited for low voltage, low current applications suchas small

9.3. Size:255K inchange semiconductor
suk3015.pdf

isc N-Channel MOSFET Transistor SUK3015FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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