FDI045N10AF102 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDI045N10AF102
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 263 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 164 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO262 I2PAK
Búsqueda de reemplazo de FDI045N10AF102 MOSFET
FDI045N10AF102 datasheet
fdp045n10a f102 fdi045n10a f102.pdf
July 2011 FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superio
fdp045n10a fdi045n10a.pdf
November 2013 FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 m Features Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching
fdi045n10a fdp045n10a.pdf
November 2013 FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 m Features Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching
fdp045n10a fdi045n10a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDH3632 , STS3411A , FDH44N50 , FDH45N50FF133 , FDH5500F085 , FDI030N06 , FDI038AN06A0 , FDI040N06 , IRF1404 , STS3409L , FDI150N10 , STS3409 , FDI3632 , STS3406 , FDI8441 , FDI8441F085 , FDL100N50F .
History: AP9T18GEJ | 2SK3451-01MR | AP99T06GP-HF | AP9T18GEH
History: AP9T18GEJ | 2SK3451-01MR | AP99T06GP-HF | AP9T18GEH
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: HAF1008S | HAF1008L | EMZB08P03H | CS30N20FA9R | AOT66613L | AOSP21313C | AOSP21311C | AOB66918L | AO3415C | AOTF20N40L | AOTF11N60L | AOT11N60L | AONS21303C | AOI280A60 | AOB66914L | AO3485C
Popular searches
2sc2078 transistor | bc558 datasheet | p75nf75 mosfet | ao4407a | mpsa06 datasheet | bc548 pinout | bdw94c | bd140 transistor
