UT100N03L-TND-R Todos los transistores

 

UT100N03L-TND-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT100N03L-TND-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO252
 

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UT100N03L-TND-R Datasheet (PDF)

 0.1. Size:364K  utc
 ut100n03l-tnd-r ut100n03g-tnd-r ut100n03l-tq2-t ut100n03g-tq2-t ut100n03l-tq2-r ut100n03g-tq2-r ut100n03g-k08-5060-r.pdf pdf_icon

UT100N03L-TND-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 2.1. Size:364K  utc
 ut100n03l-ta3-t ut100n03g-ta3-t ut100n03l-tf3-t ut100n03g-tf3-t ut100n03l-tm3-t ut100n03g-tm3-t ut100n03l-tn3-r ut100n03g-tn3-r.pdf pdf_icon

UT100N03L-TND-R

UNISONIC TECHNOLOGIES CO., LTD UT100N03 Power MOSFET 100A, 30V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220FThe UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load 11switch or in PWM applications. TO-252TO-251 FEATURES 1* RDS(ON)

 5.1. Size:815K  cn vbsemi
 ut100n03l.pdf pdf_icon

UT100N03L-TND-R

UT100N03Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewAB

MOSTRAR MÁS

Otros transistores... UT100N03L-TA3-T , UT100N03G-TA3-T , UT100N03L-TF3-T , UT100N03G-TF3-T , UT100N03L-TM3-T , UT100N03G-TM3-T , UT100N03L-TN3-R , UT100N03G-TN3-R , AON6414A , UT100N03G-TND-R , UT100N03L-TQ2-T , UT100N03G-TQ2-T , UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R , UT20N03G-TN3-R .

History: HY80N07T | 10N70G-TF1-T | KP7129A | SIR460DP | JCS12N65SEI

 

 
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