UT2305L-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT2305L-AE2-R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 116 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
Paquete / Cubierta: SOT23
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UT2305L-AE2-R Datasheet (PDF)
ut2305l-ae2-r ut2305g-ae2-r ut2305l-ae3-r ut2305g-ae3-r ut2305l-al3-r ut2305g-ag3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
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UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
ut2305.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
ut2305g-ae2-r ut2305g-ae3-r ut2305g-ag3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC conve
Otros transistores... UT20N03G-TN3-R , UT20N03G-K08-5060-R , UT2301G-AE2-R , UT2302G-AE2-R , UT2302G-AE3-R , UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , K4145 , UT2305L-AE3-R , UT2305L-AL3-R , UT2316G-AE2-R , UT2316G-AE3-R , UT2955G-AA3-R , UT2955L-TN3-R , UT2955G-TN3-R , UT3400L-AE2-R .
History: DMT5015LFDF | IPB031N08N5 | AP6N3R5I
History: DMT5015LFDF | IPB031N08N5 | AP6N3R5I



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