UT3N06L-TN3-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT3N06L-TN3-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO252

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UT3N06L-TN3-R datasheet

 ..1. Size:241K  utc
 ut3n06g-ab3-r ut3n06g-ae3-r ut3n06l-tm3-t ut3n06g-tm3-t ut3n06l-tn3-r ut3n06g-tn3-r.pdf pdf_icon

UT3N06L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate

 8.1. Size:232K  utc
 ut3n06.pdf pdf_icon

UT3N06L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3N06 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. FEATURES * Simple drive requirement SYMBOL Drain Gate

 8.2. Size:1473K  cn vbsemi
 ut3n06g-ae3.pdf pdf_icon

UT3N06L-TN3-R

UT3N06G-AE3 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23)

 9.1. Size:215K  utc
 ut3n01z.pdf pdf_icon

UT3N06L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device s general purpose is for switching device applications. FEATURES * RDS(ON)

MOSTRAR MÁS

Otros transistores... UT3401ZL-AE3-R, UT3401ZG-AE3-R, UT3404G-AE3-R, UT3404G-S08-R, UT3N06G-AB3-R, UT3N06G-AE3-R, UT3N06L-TM3-T, UT3N06G-TM3-T, STP80NF70, UT3N06G-TN3-R, UT3N10L-AA3-R, UT3N10G-AA3-R, UT3N10L-AB3-R, UT3N10G-AB3-R, UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R