STS3406 Todos los transistores

Green Product STS3406 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 174 @ VGS=10V Suface Mount Package. 30V 2A 218 @ VGS=4.5V ESD Protected. 311 @ VGS=2.5V D SOT23 G D S G S (TA=25 C unless otherwise noted)

Green Product STS3405 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 100 @ VGS=-10V SOT-23 package. -30V -3A 150 @ VGS=-4.5V D SOT-23 G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Paramete

Green Product STS3404 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 54 @ VGS= 10V Suface Mount Package. 30V 4A 76 @ VGS= 4.5V D S OT23-3L D G S G S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS

re r r P Pr Pr Pro STS3409L a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 75 @ VGS=-10V Suface Mount Package. -20V -3.2A 95 @ VGS=-4.5V 137 @ VGS=-2.5V D SOT-23 G D S G S (TA=25 C unless otherwise noted)

Gre r r P Pr Pr Pro STS3401A a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 79 @ VGS=-10V Suface Mount Package. -30V -3.2A 127 @ VGS=-4.5V D SOT-23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAXI

Green Product S TS 3402 S amHop Microelectronics C orp. AUG .18 2004 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 30@ VG S = 10V 30V 4.6A S OT-23 package. 42@ VG S =4.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw

S TS 3400 S amHop Microelectronics C orp. S ep.21 2004 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 50 @ VG S = 10V 30V 3.5A S OT-23 package. 70 @ VG S =4.5V D S OT-23 G S AB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Li

Gr P Pr P P STS3409 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 169 @ VGS=-10V Suface Mount Package. -30V -2.2A 293 @ VGS=-4.5V D SOT-23 D G S G S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATING

Green Product S TS 3401 S amHop Microelectronics C orp. J un.15 2004 P-Channel E nhancement Mode MOS FE T PR ODUC T S UMMAR Y F E ATUR E S VDS S ID S uper high dense cell design for low R DS (ON). R DS (ON) ( m ) Max R ugged and reliable. 75 @ VG S = -10V -30V -3A S OT-23 Package. 100 @ VG S = -4.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)