STS3406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductSTS3406aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.174 @ VGS=10VSuface Mount Package.30V 2A 218 @ VGS=4.5VESD Protected.311 @ VGS=2.5VDSOT23GDSGS(TA=25C unless otherwise noted)

GreenProductSTS3405aS mHop Microelectronics C orp.Ver 1.1P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100 @ VGS=-10VSOT-23 package.-30V -3A150 @ VGS=-4.5VDSOT-23GS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Paramete

GreenProductSTS3404aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.54 @ VGS= 10VSuface Mount Package.30V 4A76 @ VGS= 4.5VDS OT23-3LDGSGS(TC=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

rerrPPrPrProSTS3409LaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.75 @ VGS=-10VSuface Mount Package.-20V -3.2A 95 @ VGS=-4.5V137 @ VGS=-2.5VDSOT-23GDSGS(TA=25C unless otherwise noted)

GrerrPPrPrProSTS3401AaS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.79 @ VGS=-10VSuface Mount Package.-30V -3.2A127 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXI

GreenProductS TS 3402S amHop Microelectronics C orp.AUG .18 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.30@ VG S = 10V30V 4.6AS OT-23 package.42@ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherw

S TS 3400S amHop Microelectronics C orp.S ep.21 2004N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.50 @ VG S = 10V30V 3.5AS OT-23 package.70 @ VG S =4.5VDS OT-23GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Li

GrPPrPPSTS3409aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.169 @ VGS=-10VSuface Mount Package.-30V -2.2A293 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATING

GreenProductS TS 3401S amHop Microelectronics C orp.J un.15 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR YF E ATUR E SVDS S ID S uper high dense cell design for low R DS (ON).R DS (ON) ( m ) MaxR ugged and reliable.75 @ VG S = -10V-30V -3AS OT-23 Package.100 @ VG S = -4.5VDS OT-23GSABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)