UT60N03G-TM3-T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT60N03G-TM3-T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 49 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: TO251
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UT60N03G-TM3-T Datasheet (PDF)
ut60n03l-ta3-t ut60n03g-ta3-t ut60n03l-tm3-t ut60n03g-tm3-t ut60n03l-tn3-r ut60n03g-tn3-r ut60n03l-tnd-r ut60n03g-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 1 DESCRIPTION TO-220TO-251This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switch
ut60n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1TO-252 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the 1overall efficiency of DC/DC converters and allows operation to higher TO-251switchi
Otros transistores... UT3N10G-TN3-R , UT3N10L-K08-3030-R , UT3N10G-K08-3030-R , UT4404G-S08-R , UT4421G-S08-R , UT60N03L-TA3-T , UT60N03G-TA3-T , UT60N03L-TM3-T , AON6380 , UT60N03L-TN3-R , UT60N03G-TN3-R , UT60N03L-TND-R , UT60N03G-TND-R , UT8205AL-AL6-R , UT8205AG-AG6-R , UT8205AL-S08-R , UT8205AG-S08-R .
History: IXTA70N085T | AFN4808W | SI8819EDB | IPB017N06N3G | SI9410BDY
History: IXTA70N085T | AFN4808W | SI8819EDB | IPB017N06N3G | SI9410BDY



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