UT60N03L-TND-R Todos los transistores

 

UT60N03L-TND-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT60N03L-TND-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO252
 
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UT60N03L-TND-R Datasheet (PDF)

 ..1. Size:247K  utc
 ut60n03l-ta3-t ut60n03g-ta3-t ut60n03l-tm3-t ut60n03g-tm3-t ut60n03l-tn3-r ut60n03g-tn3-r ut60n03l-tnd-r ut60n03g-tnd-r.pdf pdf_icon

UT60N03L-TND-R

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 1 DESCRIPTION TO-220TO-251This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switch

 7.1. Size:215K  utc
 ut60n03.pdf pdf_icon

UT60N03L-TND-R

UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1TO-252 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the 1overall efficiency of DC/DC converters and allows operation to higher TO-251switchi

Otros transistores... UT4404G-S08-R , UT4421G-S08-R , UT60N03L-TA3-T , UT60N03G-TA3-T , UT60N03L-TM3-T , UT60N03G-TM3-T , UT60N03L-TN3-R , UT60N03G-TN3-R , AO3401 , UT60N03G-TND-R , UT8205AL-AL6-R , UT8205AG-AG6-R , UT8205AL-S08-R , UT8205AG-S08-R , UT8205AL-P08-R , UT8205AG-P08-R , UT9435HL-AA3-R .

 

 
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