UT8205AG-S08-R Todos los transistores

 

UT8205AG-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT8205AG-S08-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.7 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de UT8205AG-S08-R MOSFET

   - Selección ⓘ de transistores por parámetros

 

UT8205AG-S08-R Datasheet (PDF)

 ..1. Size:420K  utc
 ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf pdf_icon

UT8205AG-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch

 5.1. Size:1472K  cn vbsemi
 ut8205ag-ag6.pdf pdf_icon

UT8205AG-S08-R

UT8205AG-AG6www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G2

 5.2. Size:405K  cn tech public
 ut8205ag-ag6.pdf pdf_icon

UT8205AG-S08-R

www.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.tw

 7.1. Size:217K  utc
 ut8205a.pdf pdf_icon

UT8205AG-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re

MOSTRAR MÁS

Otros transistores... UT60N03G-TM3-T , UT60N03L-TN3-R , UT60N03G-TN3-R , UT60N03L-TND-R , UT60N03G-TND-R , UT8205AL-AL6-R , UT8205AG-AG6-R , UT8205AL-S08-R , NCEP15T14 , UT8205AL-P08-R , UT8205AG-P08-R , UT9435HL-AA3-R , UT9435HG-AA3-R , UT9435HL-AE3-R , UT9435HG-AE3-R , UT9435HL-AL6-R , UT9435HG-AG6-R .

History: PSMN5R8-40YS | GC11N65K

 

 
Back to Top

 


 
.