UTM4953L-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UTM4953L-S08-R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 4.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: SOP8
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UTM4953L-S08-R Datasheet (PDF)
utm4953l-s08-r utm4953g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
utm4953.pdf

UNISONIC TECHNOLOGIES CO., LTD UTM4953 Preliminary Power MOSFET DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM4953 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate SOP-8voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Otros transistores... UTM2054L-AE3-R , UTM2054G-AE3-R , UTM4052L-S08-R , UTM4052G-S08-R , UTM4052L-TN4-R , UTM4052G-TN4-R , UTM4052L-TN4-T , UTM4052G-TN4-T , 50N06 , UTM4953G-S08-R , UTM6016L-TA3-T , UTM6016G-TA3-T , UTM6016L-TN3-R , UTM6016G-TN3-R , UTM6016G-S08-R , UTM6016G-K08-5060-R , UTT18P10L-TN3-R .
History: AP9402GMT-HF | QM4305D | SFF27N50Z | MTP6405N6 | IPD22N08S2L-50 | PMPB13XNE | VSE003N04MS-G
History: AP9402GMT-HF | QM4305D | SFF27N50Z | MTP6405N6 | IPD22N08S2L-50 | PMPB13XNE | VSE003N04MS-G



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