UTT6NP10G-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UTT6NP10G-S08-R
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOP8

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UTT6NP10G-S08-R Datasheet (PDF)

0.1. Size:285K utc
utt6np10l-tn4-r utt6np10g-tn4-r utt6np10l-s08-r utt6np10g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT6NP10 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION 1SOP-8The UTC UTT6NP10 incorporates an N-channel MOSFET and a P-channel MOSFETit uses UTCs advanced technology to provide customers a minimum on-state resistance and high-speed switching, thereby enabling high-density mounting. The UTC UTT6NP10 is univers

9.1. Size:140K utc
utt6n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTCs advanced technology to provide customers a 1minimum on-state resistance, high switching speed and ultra low SOT-223gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. FEATURES

9.2. Size:395K kexin
utt6n10z.pdf

SMD Type MOSFETTransistorsN-Channel Power MOSFETUTT6N10Z Features Unit:mmSOT-2236.500.2 RDS(on) = 80m @VGS = 10V,ID=6A3.000.1 High Switching Speed Low Crss (Typically 3.1pF)4 Low Gate Charge (Typically 4.3nC) 1 2 32.Drain0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Gate1.Gate 2.Drain3.Source4.60 (typ) 4.Drain3.Sou

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