J300 Todos los transistores

 ..1. Size:317K  1
 j300.pdf

 0.1. Size:70K  st
 mj2501 mj3001.pdf

MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. 1 The complementary NPN type is the MJ3001. 2 TO-3 INTERNA

 0.2. Size:440K  rohm
 rcj300n20.pdf

RCJ300N20 Nch 200V 30A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 80mW ID 30A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche test

 0.3. Size:1171K  rohm
 rsj300n10.pdf

Data Sheet 4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Built-in G-S Protection Diode. 2.54 0.4 0.78 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 1000

 0.4. Size:168K  comset
 mj2500-mj2501-mj3000-mj3001.pdf

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit MJ2500 6

 0.5. Size:930K  cn hunteck
 htj300n02.pdf

HTJ300N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 26 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pack

 0.6. Size:116K  inchange semiconductor
 mj3000 3001.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ3000/3001 DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) an

 0.7. Size:254K  inchange semiconductor
 rcj300n20.pdf

isc N-Channel MOSFET Transistor RCJ300N20 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.8. Size:206K  inchange semiconductor
 mj3000.pdf

isc Silicon NPN Darlingtion Power Transistor MJ3000 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain h = 1000 (Min) @ I = 5A FE C Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Complement to PNP type MJ2500 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in