HY1808APM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY1808APM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 446 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: TO-3PS
Búsqueda de reemplazo de HY1808APM MOSFET
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HY1808APM datasheet
hy1808ap hy1808m hy1808b hy1808ps hy1808pm.pdf
HY1808AP/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description eatures F 80V/84A RDS(ON)=6.2m (typ.) @ VGS=10V S Avalanche Rated D S D G G Reliable and Rugged S D G Lead Free and Green Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D G Applications TO-3PS-3L TO-3PS-3M D Power Management for Inverter Systems. G N-Channe
hy1803c2.pdf
HY1803C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/80A D D D D D D D D RDS(ON)= 2.4m (typ.) @VGS = 10V RDS(ON)= 2.8m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC N-Channel MOSFET
hy1804p hy1804b.pdf
HY1804P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/110A RDS(ON)= 3.6m (typ.)@VGS = 10V RDS(ON)= 4.4m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S GD Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MO
hy1804d hy1804v.pdf
HY1804D/U N-Channel Enhancement Mode MOSFET Features Pin Description 40V/80A, RDS(ON)=4.0 m (typ.) @ VGS=10V RDS(ON)=4.6 m (typ.) @ VGS=4.5 V S S D S D S Avalanche Rated G D G D G G Reliable and Rugged S S D D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Pow
Otros transistores... CEP02N65D , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM , HY1808AB , HY1808APS , IRFP450 , MDP1991 , NCE8580 , SRC60R090B , AONY36352 , HM25P06D , AP3N9R5H , EMB04N03H , HY3215W .
History: STZ150NF55T | STY60NM60 | 4N65G | IXFH10N90 | BSB012NE2LX
History: STZ150NF55T | STY60NM60 | 4N65G | IXFH10N90 | BSB012NE2LX
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