FDMA3028N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMA3028N 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Encapsulados: MICROFET
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FDMA3028N datasheet
fdma3028n.pdf
June 2011 FDMA3028N Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 A for dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 A ultra-portable applications. It features two independe
fdma3023pz.pdf
December 2008 FDMA3023PZ tm Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A ultra-portable applications. It featu
fdma3027pz.pdf
June 2012 FDMA3027PZ Dual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 A for dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 A Mosfets. It features two independent P-Channel
Otros transistores... FDMA1028NZ, FDMA1029PZ, FDMA1032CZ, STS3404, FDMA2002NZ, STS3402, FDMA291P, FDMA3023PZ, BS170, STS3401A, FDMA410NZ, FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, FDMA520PZ
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