HM25P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM25P06D

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 95 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Carga de compuerta (Qg): 75 nC

Tiempo de elevación (tr): 17 nS

Conductancia de drenaje-sustrato (Cd): 719 pF

Resistencia drenaje-fuente RDS(on): 0.028 Ohm

Paquete / Caja (carcasa): DFN5X6-8L

Búsqueda de reemplazo de MOSFET HM25P06D

HM25P06D Datasheet (PDF)

..1. hm25p06d.pdf Size:829K _1

HM25P06DP-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

..2. hm25p06d.pdf Size:829K _cn_hmsemi

7.1. hm25p06k.pdf Size:883K _cn_vbsemi

HM25P06Kwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge Con

7.2. hm25p06k.pdf Size:1028K _cn_hmsemi

HM25P06KP-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

8.1. hm25p03q.pdf Size:563K _cn_hmsemi

P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S DSchematic diagram RDS(ON)

8.2. hm25p04d.pdf Size:1222K _cn_hmsemi

HM25P04DP-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)

8.3. hm25p03d.pdf Size:554K _cn_hmsemi

8.4. hm25p04k.pdf Size:969K _cn_hmsemi

HM25P04KP-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)

8.5. hm25p03k.pdf Size:840K _cn_hmsemi

HM25P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM25P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -25A D SRDS(ON)

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , IRFP250N , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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