HM25P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

HM25P06D P-Channel Enhancement Mode Power MOSFET Description The HM25P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

HM25P06K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Con

HM25P06K P-Channel Enhancement Mode Power MOSFET Description The HM25P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

HM25P04K P-Channel Enhancement Mode Power MOSFET Description The HM25P04K uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -25A Schematic diagram RDS(ON)

HM25P04D P-Channel Enhancement Mode Power MOSFET Description The HM25P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-25A RDS(ON)

HM25P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM25P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -25A D S RDS(ON)

P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON)

P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. GENERAL FEATURES S V = -30V,ID = -25A S D Schematic diagram RDS(ON)