HM100N02K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM100N02K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.2 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de HM100N02K MOSFET
HM100N02K Datasheet (PDF)
hm100n02k.pdf

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
hm100n02.pdf

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
hm100n03.pdf

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03k.pdf

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
Otros transistores... S70N08R , S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 , IRF830 , HM100N03 , HM100N03D , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T , HM100P03 .
History: AO4306 | STP19NB20 | SL12P03S | DH009N02
History: AO4306 | STP19NB20 | SL12P03S | DH009N02



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