HM10N06Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM10N06Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 14 nC
trⓘ - Tiempo de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET HM10N06Q
HM10N06Q Datasheet (PDF)
hm10n06q.pdf
HM10N06QN-Channel Enhancement Mode Power MOSFET Description The HM10N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =10A RDS(ON)
hm10n03d.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)
chm10n4ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4
hm10n10k.pdf
HM10N10Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
hm10n10i.pdf
HM10N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)
hm10n60 hm10n60f.pdf
10N60 / 10N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.0A, 600V, RDS(on) = 0.750 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 48nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast swit
hm10n15d.pdf
HM10N15DN-Channel Enhancement Mode Power MOSFET Description The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =10A Schematic diagram RDS(ON)
hm10n10k.pdf
HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)
hm10n70f.pdf
VDSS 700 V General Description ID 10 A HM10N70F, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
hm10n80f.pdf
HM10N80F General Description VDSS 800 V HM10N80F , the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat
hm10n10q.pdf
HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =1 A RDS(ON)
hm10n10ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)
hm10n80a.pdf
HM10N80A General Description VDSS 800 V HM10N80A, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
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