HM10N06Q Todos los transistores

 

HM10N06Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM10N06Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: DFN3X3

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HM10N06Q Datasheet (PDF)

 ..1. Size:743K  cn hmsemi
hm10n06q.pdf

HM10N06Q
HM10N06Q

HM10N06QN-Channel Enhancement Mode Power MOSFET Description The HM10N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =10A RDS(ON)

 8.1. Size:754K  cn hmsemi
hm10n03d.pdf

HM10N06Q
HM10N06Q

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

 9.1. Size:67K  chenmko
chm10n4ngp.pdf

HM10N06Q
HM10N06Q

CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

 9.2. Size:888K  cn vbsemi
hm10n10k.pdf

HM10N06Q
HM10N06Q

HM10N10Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 9.3. Size:697K  cn hmsemi
hm10n10i.pdf

HM10N06Q
HM10N06Q

HM10N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 9.4. Size:346K  cn hmsemi
hm10n60 hm10n60f.pdf

HM10N06Q
HM10N06Q

10N60 / 10N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 10.0A, 600V, RDS(on) = 0.750 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 48nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast swit

 9.5. Size:950K  cn hmsemi
hm10n15d.pdf

HM10N06Q
HM10N06Q

HM10N15DN-Channel Enhancement Mode Power MOSFET Description The HM10N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =10A Schematic diagram RDS(ON)

 9.6. Size:565K  cn hmsemi
hm10n10k.pdf

HM10N06Q
HM10N06Q

HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 9.7. Size:861K  cn hmsemi
hm10n70f.pdf

HM10N06Q
HM10N06Q

VDSS 700 V General Description ID 10 A HM10N70F, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.8. Size:820K  cn hmsemi
hm10n80f.pdf

HM10N06Q
HM10N06Q

HM10N80F General Description VDSS 800 V HM10N80F , the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

 9.9. Size:854K  cn hmsemi
hm10n10q.pdf

HM10N06Q
HM10N06Q

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =1 A RDS(ON)

 9.10. Size:598K  cn hmsemi
hm10n10ka.pdf

HM10N06Q
HM10N06Q

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

 9.11. Size:995K  cn hmsemi
hm10n80a.pdf

HM10N06Q
HM10N06Q

HM10N80A General Description VDSS 800 V HM10N80A, the silicon N-channel Enhanced ID 10 A PD(TC=25) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

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