HM10N10I Todos los transistores

 

HM10N10I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM10N10I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.4 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de HM10N10I MOSFET

   - Selección ⓘ de transistores por parámetros

 

HM10N10I Datasheet (PDF)

 ..1. Size:697K  cn hmsemi
hm10n10i.pdf pdf_icon

HM10N10I

HM10N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 7.1. Size:888K  cn vbsemi
hm10n10k.pdf pdf_icon

HM10N10I

HM10N10Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 7.2. Size:565K  cn hmsemi
hm10n10k.pdf pdf_icon

HM10N10I

HM10N10K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =9.6A RDS(ON)

 7.3. Size:854K  cn hmsemi
hm10n10q.pdf pdf_icon

HM10N10I

HM N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =1 A RDS(ON)

Otros transistores... HM100N15 , HM100N15A , HM100N20T , HM100P03 , HM100P03K , HM1060E , HM10N03D , HM10N06Q , AON7403 , HM10N10KA , HM10N10Q , HM10N15D , HM10N60 , HM10N60F , HM10N70F , HM10N80A , HM10N80F .

History: 2SK526 | SL20N10 | AOD2904

 

 
Back to Top

 


 
.