HM120N03K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM120N03K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 48 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 1350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HM120N03K

HM120N03K Datasheet (PDF)

..1. Size:559K cn hmsemi
hm120n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

6.1. Size:594K cn hmsemi
hm120n03.pdf

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

7.1. Size:977K cn hmsemi
hm120n04.pdf

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)

7.2. Size:711K cn hmsemi
hm120n04k.pdf

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

7.3. Size:526K cn hmsemi
hm120n04i.pdf

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

7.4. Size:904K cn hmsemi
hm120n04d.pdf

HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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