HM12N15I Todos los transistores

 ..1. Size:542K  cn hmsemi
 hm12n15i.pdf

 8.1. Size:47K  chenmko
 chm12n10pagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM12N10PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

 9.1. Size:236K  philips
 phm12nq20t.pdf

PHM12NQ20T TrenchMOS standard level FET Rev. 01 30 January 2003 Preliminary data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHM12NQ20T in SOT685-1 (QLPAK). 1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

 9.2. Size:328K  cn hmsemi
 hm12n60 hm12n60f.pdf

HM12N60 / HM12N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 600V, RDS(on) = 0.65 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switc

 9.3. Size:571K  cn hmsemi
 hm12n20d.pdf

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID = A RDS(ON)

 9.4. Size:367K  cn hmsemi
 hm12n65 hm12n65f.pdf

HM12N65 / HM12N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast w