HM12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM12N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 231 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 90 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET HM12N65
HM12N65 Datasheet (PDF)
hm12n65 hm12n65f.pdf
HM12N65 / HM12N65F650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 52nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast w
hm12n60 hm12n60f.pdf
HM12N60 / HM12N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 12.0A, 600V, RDS(on) = 0.65 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 52nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switc
phm12nq20t.pdf
PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.
chm12n10pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe
hm12n15i.pdf
HM12N15IN-Channel Enhancement Mode Power MOSFET DDescription The HM12N15I uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID =12A RDS(ON)
hm12n20d.pdf
HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID = A RDS(ON)
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FHP15N65A | SSP80R240S2
