HM12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM12N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220

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HM12N65 Datasheet (PDF)

..1. Size:367K cn hmsemi
hm12n65 hm12n65f.pdf

HM12N65 / HM12N65F650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 52nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast w

8.1. Size:328K cn hmsemi
hm12n60 hm12n60f.pdf

HM12N60 / HM12N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 12.0A, 600V, RDS(on) = 0.65 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 52nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switc

9.1. Size:236K philips
phm12nq20t.pdf

PHM12NQ20TTrenchMOS standard level FETRev. 01 30 January 2003 Preliminary data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHM12NQ20T in SOT685-1 (QLPAK).1.2 Features SOT96 (SO-8) footprint compatible Low thermal resistance Surface mount package Low profile.

9.2. Size:47K chenmko
chm12n10pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

9.3. Size:542K cn hmsemi
hm12n15i.pdf

HM12N15IN-Channel Enhancement Mode Power MOSFET DDescription The HM12N15I uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID =12A RDS(ON)

9.4. Size:571K cn hmsemi
hm12n20d.pdf

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID = A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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